MPSW51, MPSW51A
One Watt High Current Transistors
PNP Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATING...
MPSW51, MPSW51A
One Watt High Current
Transistors
PNP Silicon
Features
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
VCEO
Vdc
MPSW51
−30
MPSW51A
−40
Collector −Base Voltage
MPSW51 VCBO −40 Vdc
MPSW51A
−50
Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C
VEBO IC PD
−5.0 −1000
1.0 8.0
Vdc mAdc mW mW/°C
Total Device Dissipation @ TC = 25°C PD 2.5 W
Derate above 25°C
20 mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
125 °C/W
Thermal Resistance, Junction−to−Case
RqJC
50 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to ...
