MPSW45A

MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Darlington Transistors NPN Silicon COLLECTOR 3 BASE 2 Order this document by MPSW45/D MPSW45 MPSW45A* *Motorola Preferred Device EMITTER 1 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol MPSW45 MPSW45A Unit VCES VCBO VEBO IC PD 40 50 50 60 12 12 1.0 1.0 1.0 8.0 Vdc Vdc Vdc Adc Watts mW/°C PD 2.5 Watts 20 mW/°C TJ, Tstg – 55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 125 Thermal Resistance, Junction to Case RqJC 50 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic °C/W °C/W OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 100 µAdc, VBE ...