Document
MMPQ3467
Quad Memory Driver Transistor
PNP Silicon
MAXIMUM RATINGS Rating
Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current —
Continuous
Power Dissipation @ TA = 25°C Derate above 25°C
Power Dissipation @ TC = 25°C Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol
VCEO VCB VEB IC
Value −40 −40 −5.0 −1.0
Unit Vdc Vdc Vdc Adc
PD PD TJ, Tstg
Each Transistor
Four Transistors
Equal Power
0.52 1.2 4.2 9.6
1.0 2.5 8.0 20
−55 to +150
W
mW/°C W
mW/°C °C
http://onsemi.com
16 1
CASE 751B−05, STYLE 4 SO−16
1 16 2 15 3 14 4 13 5 12 6 11 7 10 89
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage(1) (IC = −10 mAdc, IB = 0)
V(BR)CEO
Collector −Base Breakdown Voltage (IC = −10 mAdc, IE = 0)
V(BR)CBO
Emitter −Base Breakdown Voltage (IE = −10 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Curren.