MPSA14

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors NPN Silicon COLLECTOR 3 BASE 2 Order this document by MPSA13/D MPSA13 MPSA14 * *Motorola Preferred Device EMITTER 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCES VCBO VEBO IC PD 30 Vdc 30 Vdc 10 Vdc 500 mAdc 625 mW 5.0 mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 Watts 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg – 55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 Thermal Resistance, Junction to Case RqJC 83.3 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic °C/W °C/W OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 100 µAdc, IB = 0) Collector Cutoff Current ...