MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Quad Amplifier Switching Transistor
PNP Silicon
14 13 12 11 10 9 8
PNP
1234567
M...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Quad Amplifier Switching
Transistor
PNP Silicon
14 13 12 11 10 9 8
PNP
1234567
MPQ3906
Motorola Preferred Device
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous
VCEO VCBO VEBO
IC
–40
–40
–5.0
–200
Each
Transistor
Four
Transistors Equal Power
Vdc Vdc Vdc mAdc
Total Device Dissipation
@ TA = 25°C Derate above 25°C
PD 500
4.0
900 mW 7.2 mW/°C
Total Device Dissipation
@ TC = 25°C Derate above 25°C
PD 825
6.7
2.4 Watts 19.2 mW/°C
Operating and Storage Junction TJ, Tstg Temperature Range
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Junction Junction to Case to Ambient
Unit
Thermal Resistance
Each Die Effective, 4 Die
151 250 °C/W 52 139 °C/W
Coupling Factors
Q1–Q4 or Q2–Q3
34
70 %
Q1–Q2 or Q3–Q4
2.0
26
%
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Chara...