MPQ3906

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Amplifier Switching Transistor PNP Silicon 14 13 12 11 10 9 8 PNP 1234567 MPQ3906 Motorola Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous VCEO VCBO VEBO IC –40 –40 –5.0 –200 Each Transistor Four Transistors Equal Power Vdc Vdc Vdc mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 500 4.0 900 mW 7.2 mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 825 6.7 2.4 Watts 19.2 mW/°C Operating and Storage Junction TJ, Tstg Temperature Range –55 to +150 °C THERMAL CHARACTERISTICS Characteristic Junction Junction to Case to Ambient Unit Thermal Resistance Each Die Effective, 4 Die 151 250 °C/W 52 139 °C/W Coupling Factors Q1–Q4 or Q2–Q3 34 70 % Q1–Q2 or Q3–Q4 2.0 26 % ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Chara...