2N4265

2N4264 2N4265 CASE 29-02, STYLE 1 TO-92 (TO-226AA) GENERAL PURPOSE TRANSISTOR NPN SILICON THERMAL CHARACTERISTICS Characteristic Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation TA = 25°C Derate above 25°C Total Device Dissipation (a Tq = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO vCBO v EBO "C PD Pd TJ. Tstg 2N4264 2N4265 15 12 30 6.0 200 625 5.0 1.5 12 -55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol R &JC R &JA Max 83.3 200 Unit °C/W °c/w ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) OFF CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage dC = 1.0 mAdc, lg = 0) 2N4264 2N4265 Collector-Base Breakdown Voltage dC = 10 MAdc, Ie = 0) Emitter-Base Breakdown Voltage (IE = 10 MAdc, lc = 0...