2N3494 2N3495
SILICON PNP TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N349...
2N3494 2N3495
SILICON
PNP TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3494 and 2N3495 are silicon
PNP transistors designed for general purpose amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature
SYMBOL
VCBO VCEO VEBO
IC PD PD TJ, Tstg
2N3494 80
2N3495 120
80 120
4.5
100
0.6
3.0
-65 to +200
UNITS V V V mA W W °C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N3494
SYMBOL TEST CONDITIONS
MIN MAX
ICBO
VCB=50V (2N3494)
- 100
ICBO
VCB=90V (2N3495)
--
IEBO
VEB=3.0V
- 25
BVCBO
IC=10μA
80 -
BVCEO
IC=10mA
80 -
BVEBO
IE=10μA
4.5 -
VCE(SAT) IC=10mA, IB=1.0mA
- 0.3
VBE(SAT) IC=10mA, IB=1.0mA
0.6 0.9
hFE VCE=10V, IC=100μA
35 -
hFE VCE=10V, IC=1.0mA
40 -
hF...