2N2223

2N2223 2N2223A SILICON DUAL NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2223 and 2N2223A are dual silicon NPN transistors manufactured by the epitaxial planar process utilizing two individual chips mounted in a hermetically sealed metal case designed for differential amplifier applications. MARKING: FULL PART NUMBER TO-78 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation (One Die) Power Dissipation (Both Dice) Operating and Storage Junction Temperature SYMBOL VCBO VCER VCEO VEBO IC PD PD TJ, Tstg 100 80 60 7.0 500 500 600 -65 to +200 UNITS V V V V mA mW mW °C ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX ICBO ICBO IEBO VCB=80V VCB=80V, TA=150°C VEB=5.0V 10 15 10 BVCBO BVCER BVCEO BVEBO IC=100μA IC=100mA, REB=10Ω IC=30mA IE=100μA 10...