Document
MM4036 MM4037
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
SWITCHING TRANSISTOR
PNP SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
MM4036 MM4037
Collector-Base Voltage
MM4036 MM4037
Emitter-Base Voltage
Base Current
—Collector Current Continuous
@Total Device Dissipation T^ = 25°C
Derate above 25°C
Total Device Dissipation 1 TC = 25°C Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol vCEO
vCBO vEBO
PD PD TJ- Tstg
Value
65 40
90 60 5.0 500
1.0 1.0 5.71 7.0
40 -65 to +200
Unit Vdc
Vdc
Vdc mAdc Adc Watt mW/°C Watts mW/°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R ftjc
25
°C/W
Thermal Resistance, Junction to Ambient
RejAd>
175
°C/W
(D RflJA is measured with the device soldered into a typical printed circuit board
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
_^
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage(2) dC = 10 mAdc, Ib = 0).