MHQ3467
CASE 632-02, STYLE 1
TO-116
QUAD MEMORY DRIVER TRANSISTOR
PNP SILICON
Refer to MD3467 for graphs.
MAXIMUM RATIN...
MHQ3467
CASE 632-02, STYLE 1
TO-116
QUAD MEMORY DRIVER
TRANSISTOR
PNP SILICON
Refer to MD3467 for graphs.
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation
@ TA = 25°C
Derate above 25°C Total Device Dissipation
@ TC = 25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
Symbol vCEO vCBO VEBO
Value 40 40 5.0
ic 1.0
Each
Transistor
Total Device
PD
0.9 5.14
2.7 15.4
pd TJ- Tstg
1.8 10.3
6.3 36
-55 to +200
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.]
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown VoltageO) dC = 10 mAdc, Bl = 0)
Collector-Base Breakdown Voltage dC = 10 /nAdc, Ie = 0)
Emitter-Base Breakdown Voltage (IE = 10^Adc, Ic = 0)
Collector Cutoff Current (Vcb = 30 Vdc, Ie = 0)
Emitter Cutoff Current
(Vbe = 3.0 Vdc, Cl = 0)
ON CHARACTERISTICS
DC Current Gain(1) c(l = 500 mAdc, VcE = 10 Vdc)
Collector-Emitter Saturatio...
