MMBT6429

MMBT6428,29 CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) AMPLIFIER TRANSISTOR NPN SILICON Refer to MPSA18 for graphs. MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol v CEO v CBO VEBO ic Value MMBT6428 MMBT6429 50 45 60 55 6.0 200 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic *Total Device Dissipation, Ta = 25°C Derate above 25°C Symbol PD Storage Temperature Tstg Thermal Resistance Junction to Ambient R ftJA 'Package mounted on 99.5% alumina 10 x 8 x 0.6 mm. Max 350 2.8 150 357 Unit mW mW/°C °C °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) OFF CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage (IC = 10 mAdc, Bl = 0) dC = 1.0 mAdc, Bl = 0) Collector-Base Breakdown Voltage dC = 0.1 mAdc, l E = 0) dC = 0.1 mAdc, El = 0) Collector Cutoff Current (Vce = 30 Vdc) MMBT6428 MMBT6429 MMBT6428 MMBT6429 Collector Cutoff Current (Vcb = 30...