MMBT5550

MMBT5550 CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) HIGH VOLTAGE TRANSISTOR NPN SILICON Refer to 2N5550 for graphs. MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol vCEO vCB0 vEBO 'C THERMAL CHARACTERISTICS Characteristic Symbol "Total Device Dissipation, T^ = 25°C Derate above 25°C PD Storage Temperature T stq 'Thermal Resistance Junction to Ambient ReJA "Package mounted on 99.5% alumina 10 x 8 x 0.6 mm. ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage dC = 1.0 mAdc, jb = 0) Collector-Base Breakdown Voltage dC = 10 ^Adc, lc = 0) Emitter-Base Breakdown Voltage (IE = 10 /nAdc, lc = 0) Collector Cutoff Current (Vcb = 100 Vdc, l£ = 0) (VCB = 100 Vdc, l E = 0, TA = 100°C) Emitter Cutoff Current (VE b = 4.0 Vdc, lc = 0) ON CHARACTERISTICS DC Current Gain HC = 1.0 hi Adc, Vce = 5.0 Vdc) dC = 10 mAdc, Vce = ...