Document
MRF511
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage .,
Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation Tq = 25°C
Derate above 25°C Storage Temperature StudTorqued) (1) For Repeated Assembly use 5 In. Lb.
Symbol VCEO vCBO v EBO
ic
PD
Tstg
-
Value 20 35 3.5 250
5.0 28.6
- 65 to + 200
6.5
Unit Vdc Vdc Vdc
mAdc
Watts mW/°C
°C
In. Lb.
CASE 244A-01, STYLE 1
TO-117
HIGH FREQUENCY TRANSISTOR
NPN SILICON
;
"\*r
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, Ib = 0)
Collector-Base Breakdown Voltage dC = 100 fiAdc, Ie = 0)
Emitter-Base Breakdown Voltage (IE = 100 /iAdc, Ic = 0)
Collector Cutoff Current
(Vce = 15 vdc, Ib = o)
ON CHARACTERISTICS
DC Current Gain OC = 80 mAdc, Vce
10 Vdc)
Collector-Emitter Saturation Voltage PC = 100 mAdc, Ib = 10 mAdc)
SMALL SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
(IC = 80.