2N3866 2N3866A
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector ...
2N3866 2N3866A
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation Ca Jq = 25°C Derate above 25°C
Storage Temperature
Symbol VCEO VCBO VEBO
'c
PD
T stg
Value 30 55 3.5 0.4 5.0 28.6
-65 to +200
Unit Vdc Vdc Vdc Adc Watts
mW/°C
°C
JAN, JTX, JTXV AVAILABLE CASE 79-02, STYLE 1
TO-39 (TO-205AD)
HIGH FREQUENCY
TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage dC = 5.0 mAdc, Rbe = 10 n)
Collector-Emitter Sustaining Voltage dC = 5.0 mAdc, Bl = 0)
Emitter-Base Breakdown Voltage (IE = 100 MAdc, lc = 0)
Collector Cutoff Current (VC E = 28 Vdc, Bl = 0)
Collector Cutoff Current
(Vce = 30 Vdc, Vbe = -1.5 Vdc (Rev.), Jq = 200°C) (Vce = 55 Vdc, V B e = -1.5 Vdc (Rev.)
Emitter Cutoff Current
(V B e = 3.5 Vdc, lc = 0)
ON CHARACTERISTICS
DC Current Gain
dC = 360 mAdc, Vce = 5.0 Vdc) dC = ...
