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2N3553

Seme LAB

NPN SILICON HIGH FREQUENCY TRANSISTOR

2N3553 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0...


Seme LAB

2N3553

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2N3553 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. (00.0.8395)max. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2 13 2.54 (0.100) 45° TO-39 (TO - 205AD) Pin 1 – Emitter Pin 2 – Base Pin 3 – Collector NPN SILICON HIGH FREQUENCY TRANSISTOR APPLICATIONS The 2N3553 is designed for amplifier and oscillator applications in military and industrial equipment. Suitable for use as output, driver or pre-driver stages in VHF equipment. FEATURES Fast Switching Low Leakage Current ABSOLUTE MAXIMUM RATINGS(TA = 25°c unless otherwise stated) VCEO Collector – Emitter Voltage VCBO Collector – Base Voltage VEBO Emitter – Base Voltage IC Continuous Collector Current PD Total Device Disipation @ TCase = 25°C Derate above 25°C Tj , Tstg Operating and Storage Junction Temperature Range 40V 65V 4.0V 1A 7W 40mW/°C ...




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