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2N3839

Central Semiconductor

NPN SILICON RF TRANSISTORS

2N2857 2N3839 NPN SILICON RF TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N...


Central Semiconductor

2N3839

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Description
2N2857 2N3839 NPN SILICON RF TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2857 and 2N3839 are silicon NPN RF transistors designed for VHF/UHF amplifier, oscillator and converter applications. MARKING: FULL PART NUMBER TO-72 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Power Dissipation PD Power Dissipation (TC=25°C) PD Operating and Storage Junction Temperature TJ, Tstg 30 15 2.5 40 200 300 -65 to +200 UNITS V V V mA mW mW °C ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N2857 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=15V - 10 ICBO VCB=15V, TA=150°C - 1.0 BVCBO IC=1.0μA 30 - BVCEO IC=3.0mA 15 - BVEBO IE=10μA 2.5 - hFE VCE=1.0V, IC=3.0mA 30 150 fT VCE=6.0V, IC=5.0mA, f=100MHz 1.0 1.9 Cob VCB=10V, IE=0, f=100kHz to 1.0MHz - 1.0 Po VCB=10V, IC=12mA,...




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