2N2857 2N3839
NPN SILICON RF TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N...
2N2857 2N3839
NPN SILICON RF
TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2857 and 2N3839 are silicon
NPN RF
transistors designed for VHF/UHF amplifier, oscillator and converter applications.
MARKING: FULL PART NUMBER
TO-72 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Power Dissipation
PD
Power Dissipation (TC=25°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
30 15 2.5 40 200 300 -65 to +200
UNITS V V V mA
mW mW °C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N2857
SYMBOL TEST CONDITIONS
MIN MAX
ICBO
VCB=15V
- 10
ICBO
VCB=15V, TA=150°C
- 1.0
BVCBO
IC=1.0μA
30 -
BVCEO
IC=3.0mA
15 -
BVEBO
IE=10μA
2.5 -
hFE VCE=1.0V, IC=3.0mA
30 150
fT VCE=6.0V, IC=5.0mA, f=100MHz
1.0 1.9
Cob VCB=10V, IE=0, f=100kHz to 1.0MHz
- 1.0
Po VCB=10V, IC=12mA,...