MPF521

MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Drain Current Gate Current Total Device Dissipation (a T"a = 25°C Derate above 25°C Operating Channel Temperature Lead Temperature, 1/16" From Seated Surface for 10 Seconds Storage Channel Temperature Range Symbol VDS Vdgi V DG2 ID 'GIF !G2F pd ^channel TL Value 25 30 30 30 10 10 300 1.71 150 200 Unit " Vdc Vdc mAdc mAdc mW mW/°C °C °C T stg - 65 to + 1 50 °C MPF521 CASE 317-01, STYLE 1 MOSFET DUAL GATE VHF AMPLIFIER TRANSISTOR N-CHANNEL — ENHANCEMENT ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.! Characteristic Symbol OFF CHARACTERISTICS Gate 1 -Source Breakdown Voltage (VQ2 = Vds = 0, Iqi = 10 MAdc) Gate 2-Source Breakdown Voltage (Vqis = Vds = 0, lG2 = 10 /xAdc) V(BR)G1SO v (BR)G2SO Gate 1 Reverse Leakage Current (V G1S = 5.0 Vdc, V G2 s = V DS = 0) Gate 2 Reverse Leakage Current (VG 2S = 5.0 Vdc, V G1S = V DS = 0) Drain-Source Breakdown Voltage (VQ2 = 0, Id = 10 /uAdc) ON CHARACTER...