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MRF313
The RF Line NPN Silicon High-Frequency Transistor 1.0W, 400MHz, 28V
Designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio.
• Specified 28 V, 400 MHz characteristics —
Output power = 1.0 W Power gain = 15 dB min. Efficiency = 45% typ.
• Emitter ballast and low current density for improved MTBF • Common emitter for improved stability
M/A-COM Products
Released - Rev. 07.07
Product Image
CASE 305A–01, STYLE 1
1
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