MRF229

MRF229 MRF230 MRF229 CASE 79-03, STYLE 5 MRF230 CASE 79-02, STYLE 1 TO-39 (TO-205AD) HIGH FREQUENCY TRANSISTOR NPN SILICON f MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation Tc = 25°C(1) Derate above 25°C Storage Temperature Symbol v CEO VCBO VEBO c PD Tstg Value 18 36 4.0 0.5 5.0 28.6 - 65 to + 200 Unit Vdc Vdc Vdc Adc Watts mW/X °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case Rex 35 °C/W (1) These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as Class C RF Amplifiers. 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage dC = 25 mAdc, Ib = 0) Collector-Emitter Breakdown Voltage dC = 25 mAdc, V BE = 0) Emitter-Base Breakdown Voltage E(l = 0.25 mAdc, lc = 0) Coll...