PROCESS CP317V
Small Signal Transistor
NPN - RF Transistor Chip
PROCESS DETAILS Process Die Size Die Thickness Base Bon...
PROCESS CP317V
Small Signal
Transistor
NPN - RF
Transistor Chip
PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization
GEOMETRY
EPITAXIAL PLANAR 14.5 x 14.5 MILS 7.1 MILS 2.4 x 2.2 MILS 2.4 x 2.2 MILS Al - 30,000Å Au - 18,000Å
GROSS DIE PER 4 INCH WAFER 53,788
PRINCIPAL DEVICE TYPES CMPT918 2N918 2N2857 2N5179 2N5770 BFY90 PN3563 PN3564
w w w. c e n t r a l s e m i . c o m
R0 (30-August 2011)
PROCESS CP317V
Typical Electrical Characteristics
w w w. c e n t r a l s e m i . c o m
R0 (30-August 2011)
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