BFR90

BFR90 CASE 317A-01, STYLE 2 HIGH FREQUENCY TRANSISTOR NPN SILICON J< MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation Ta = 60°C Derate above 60°C Storage Temperature Symbol v CEO VCBO v EBO "C PD Tstq Value 15 20 3.0 30 180 2.0 - 65 to + 1 50 Unit Vdc Vdc Vdc mAdc mW mW/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Symbol R &JA Max 500 Unit °C/W ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted. Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage Oc = 1.0 mAdc, Bl = 0) Collector-Base Breakdown Voltage C(l = 0.1 mAdc, El = 0) Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, lc = 0) Collector Cutoff Current (VcB = 10 Vdc, lg = 0) ON CHARACTERISTICS DC Current Gain dC = 14 mAdc, VCe = 10 Vdc) SMALL SIGNAL CHARACTERISTICS —Current-Gain Bandwidth Product (lC = 14 mAdc, Vce = 10 Vdc, f = 0.5 GHz) Collector-Ba...