2N6255

2N6255 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation Jq = 25°C Derate above 25°C Storage Temperature Symbol vCEO v CBO v EBO ic PD Tstg Value 18 36 4.0 1.0 5.0 28.5 -65 to +200 Unit Vdc Vdc Vdc Adc Watts mW/°C °C CASE 79-02, STYLE 1 TO-39 (TO-205AD) HIGH FREQUENCY TRANSISTOR NPN SILICON ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Typ OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 10 mAdc, Ib = 0) Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, Vbe = 0) Emitter-Base Breakdown Voltage (IE = 1.0 mAdc, Ic = 0) Collector Cutoff Current (Vcb = 15 Vdc, Ie = 0) Collector Cutoff Current (Vce = 15 Vdc, V B e = 0, TC = 55°C) ON CHARACTERISTICS DC Current Gain dC = 250 mAdc, Vce = 5.0 Vdc) SMALL SIGNAL CHARACTERISTICS Output Capacitance (Vcb = 12.5 Vdc, El = 0, f = 1.0 MHz) FUNCTIONAL TEST (FIGURE 1) Common-Emitter A...