MRF912

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Peak Total Device Dissipation C« Tq = 75°C Derate above 75°C Storage Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol vCEO VCBO v EBO ic PD T stg Value 12 20 3.0 50 500 4.0 -65 to +200 Unit Vdc Vdc Vdc mAdc mW mW/°C °C Symbol R 0JC Max 250 Unit °C/W MRF912 CASE 303-01, STYLE 1 HIGH FREQUENCY TRANSISTOR NPN SILICON ELECTRICAL CHARACTERISTICS

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