MRF911

MRF911 CASE 317-01, STYLE 2 HIGH FREQUENCY TRANSISTOR NPN SILICON ^r MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Peak @Total Device Dissipation Tl = 50°C Derate above 50°C Storage Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Lead Symbol vCEO VCBO VEBO 'C PD T stg Value 12 20 3.0 40 400 4.0 - 65 to + 1 50 Unit Vdc Vdc Vdc mAdc mW mW7°C °C Symbol RflJL Max 250 Unit °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.] Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage c(l = 1.0 mAdc, Bl = 0) Collector-Base Breakdown Voltage c(l = 0.1 mAdc, Ie = 0) Emitter-Base Breakdown Voltage E(l = 0.1 mAdc, lc = 0) Collector Cutoff Current (Vcb = 15 Vdc, El = 0) ON CHARACTERISTICS DC Current Gain dC = 30 mAdc, Vce = 10 Vdc) SMALL SIGNAL CHARACTERISTICS —Current-Gain Bandwidth Product dC = 30 mAdc, VC E = 10 Vdc, f = 1.0 GHz) Collector-Base Capaci...