MRF604
CASE 26-03, STYLE 1
TO-46 (TO/206AB)
HIGH FREQUENCY TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating Collector-Emi...
MRF604
CASE 26-03, STYLE 1
TO-46 (TO/206AB)
HIGH FREQUENCY
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
@Total Device Dissipation Tc = 25°C
Derate above 25°C Storage Temperature
Symbol VCEO v CBO VEBO
pd
Tsta
Value 20 40 2.0 2.5 0.04
- 65 to + 200
Unit Vdc Vdc Vdc Watts W/°C °C
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage dC = 5.0 mAdc, Bl = 0)
Collector-Base Breakdown Voltage dC = 100 /uAdc, l£ = 0)
Emitter-Base Breakdown Voltage (IE = 100 juAdc, lc = 0)
Collector Cutoff Current
(Vqe = 12 Vdc, Ib = 0)
ON CHARACTERISTICS
DC Current Gain dC = 50 mAdc, Vqe = 5.0 Vdc)
SMALL SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
dC = 50 mAdc, Vqe = 10 Vdc, f = 200 MHz)
Output Capacitance (Vcb = 12.5 Vdc, l£ = 0, f = 1.0 MHz)
FUNCTIONAL TEST (FIGURED
Common-Emitter Amplifier Power Gain (Vcc = 12.5 Vdc, Pout = 1.0 W, f ...
