MRF581
NPN SILICON RF TRANSISTOR
DESCRIPTION:
The MRF581 is Designed for
High current low Power Amplifier Applications...
MRF581
NPN SILICON RF
TRANSISTOR
DESCRIPTION:
The MRF581 is Designed for
High current low Power Amplifier Applications up to 1.0 GHz.
PACKAGE STYLE
Dim. Are in mm
FEATURES:
Low Noise Figure Low Intermodulation Distortion High Gain Omnigold™ Metalization System
MAXIMUM RATINGS
IC 200 mA
VCBO
36 V
VCEO
18 V
VEBO
2.5 V
PDISS
2.5 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG
-65 °C to +200 °C
Leads 1 and 3 = Emitter 2 = Collector 4 = Base
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BVCBO
IC = 1.0 mA
BVCEO
IC = 1.0 mA
BVEBO
IE = 100 µA
IEBO VEB = 2.0 V
ICBO
VCB = 15 V
hFE VCE = 5.0 V
IC = 50 mA
MINIMUM TYPICAL MAXIMUM 36 18 2.5 100 100 50 200
UNITS V V V µA µA ---
Ccb VCB = 10 V
f = 1.0 MHz
1.4 2.0 pF
GP VCC = 10 V
IC = 50
f = 0.5 GHz
13
15.5
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to cha...
