Document
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
2N6515, 2N6519 2N6516, 2N6520 2N6517
TO-92 Plastic Package
HIGH VOLTAGE TRANSISTORS
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
2N6515 2N6516 2N6517
2N6519 2N6520
Collector Emitter Voltage
VCEO
250 300 350
Collector Base Voltage
VCBO
250 300 350
Emitter Base Voltage
VEBO
NPN-------------------6------------------
PNP-------------------5------------------
Collector Current Continuous
IC
500
Base Current (Continuous)
IB
250
Total Power Dissipation @ Ta=25ºC PD
625
Derate Above 25ºC
5.0
Operating And Storage Junction
Tstg
-55 to +150
Temperature Range
THERMAL RESISTANCE Junction to ambient Junction to case
Rth(j-a) Rth(j-c)
200 83.3
UNIT
V V V V mA mA mW mW/ºC ºC
ºC/W ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collecto.