Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON EPITAXIAL TRANSIS...
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON EPITAXIAL
TRANSISTORS
2N5088 2N5089 TO-92 CBE
EBC
Amplifier
Transistors
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
2N5088
Collector -Base Voltage
VCBO
35
Collector -Emitter Voltage
VCE0
30
Emitter -Base Voltage
VEBO
Collector Current- Continuous
IC
Power Dissipation@ Ta=25 deg C PD
Derate Above 25 deg C
Power Dissipation@ Tc=25 deg C PD
Derate Above 25 deg C
Junction Temperature
Tj
Storage Temperature
Tstg
THERMAL RESISTANCE
Junction to Ambient
Rth(j-a) (1)
Junction to Case
Rth(j-c)
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL
Collector -Emitter Voltage
VCEO* IC=1mA, IB=0
2N5088
2N5089
4.5 50 625 5.0 1.5 12 150 -55 to +150
357 125
Min 30 25
2N5089 UNITS 30 V 25 V V mA mW mW/deg C W mW/deg C deg C deg C
deg C/W deg C/W
Max UNITS -V -V
Collector -Base Voltage
VCBO IC=100uA,IE=0
2N5088
35
-
V
2N5089
...
