2N5086

2N5086 2N5087 CASE 29-02, STYLE 1 TO-92 (TO-226AA) AMPLIFIER TRANSISTOR PNP SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation TA = 25°C Derate above 25°C @Total Device Dissipation Tq = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol vCEO VCBO VEBO ic PD Pd Tj. Tstg Value Unit 50 Vdc 50 Vdc 3.0 Vdc 50 mAdc 350 mW 2.8 r mW/°C 1.0 Watt 8.0 mW/°C -55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol . Max Unit Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Rojc RfljAd) 125 357 '' °C/W °c/w (1) R^jA is measured with the device soldered into a typical printed circuit board. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(2) (IC = 1.0 mAdc, Ib = 0) Collector-Base Breakdown Voltage dC = 100 ixAdc, Ie...