Document
FUJITSU SEMICONDUCTOR DATA SHEET
DS05-20862-3E
FLASH MEMORY
CMOS
4M (512K × 8/256K × 16) BIT
MBM29LV400TC-70/-90/-12/MBM29LV400BC-70/-90/-12
s FEATURES
• Single 3.0 V read, program, and erase Minimizes system level power requirements
• Compatible with JEDEC-standard commands Uses same software commands as E2PROMs
• Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP(I) (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type) 44-pin SOP (Package suffix: PF) 48-pin CSOP (Package suffix: PCV) 48-ball FBGA (Package suffix: PBT)
• Minimum 100,000 program/erase cycles • High performance
70 ns maximum access time • Sector erase architecture
One 8K word, two 4K words, one 16K word, and seven 32K words sectors in word mode One 16K byte, two 8K bytes, one 32K byte, and seven 64K bytes sectors in byte mode Any combination of sectors can be concurrently erased. Also supports full chip erase • Boot Code Sector Architecture T = Top sector B = Bottom sect.