MBM29F033C-90

FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 32M (4M × 8) BIT DS05-20869-3E MBM29F033C-70/-90/-12 s FEATURES Single 5.0 V read, write, and erase Minimizes system level power requirements Compatible with JEDEC-standard commands Pinout and software compatible with single-power supply Flash Superior inadvertent write protection 40-pin TSOP (I) (Package suffix: PTN-Normal Bend Type, PTR-Reversed Bend Type) Minimum 100,000 write/erase cycles High performance 70 ns maximum access time Sector erase architecture Uniform sectors of 64K bytes each Any combination of sectors can be erased. Also supports full chip erase Embedded EraseTM Algorithms Automatically preprograms and erases the chip or any sector Embedded ProgramTM Algorithms Automatically programs and verifies data at specified address Data Polling and Toggle Bit feature for detection of program or erase cycle completion Ready/BUSY output (RY/BY) Hardware method for detection of program ...