32M (4M x 8) BIT FLASH MEMORY
FUJITSU SEMICONDUCTOR DATA SHEET
FLASH MEMORY
CMOS
32M (4M × 8) BIT
DS05-20869-3E
MBM29F033C-70/-90/-12
s FEATURES
• ...
Description
FUJITSU SEMICONDUCTOR DATA SHEET
FLASH MEMORY
CMOS
32M (4M × 8) BIT
DS05-20869-3E
MBM29F033C-70/-90/-12
s FEATURES
Single 5.0 V read, write, and erase Minimizes system level power requirements
Compatible with JEDEC-standard commands Pinout and software compatible with single-power supply Flash Superior inadvertent write protection
40-pin TSOP (I) (Package suffix: PTN-Normal Bend Type, PTR-Reversed Bend Type) Minimum 100,000 write/erase cycles High performance
70 ns maximum access time Sector erase architecture
Uniform sectors of 64K bytes each Any combination of sectors can be erased. Also supports full chip erase Embedded EraseTM Algorithms Automatically preprograms and erases the chip or any sector Embedded ProgramTM Algorithms Automatically programs and verifies data at specified address Data Polling and Toggle Bit feature for detection of program or erase cycle completion Ready/BUSY output (RY/BY) Hardware method for detection of program ...
Similar Datasheet