SEMICONDUCTOR
TECHNICAL DATA
TIP117F
EPITAXIAL PLANAR PNP TRANSISTOR
MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTE...
SEMICONDUCTOR
TECHNICAL DATA
TIP117F
EPITAXIAL PLANAR
PNP TRANSISTOR
MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
FEATURES High DC Current Gain. : hFE=1000(Min.), VCE=-4V, IC=-1A. Low Collector-Emitter Saturation Voltage. Complementary to TIP112F.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC Pulse
Base Current
DC
VCBO VCEO VEBO
IC ICP IB
Collector Power Dissipation
Ta=25 Tc=25
PC
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING -100 -100 -5 -2 -4 -50 2 20 150
-65 150
UNIT V V V
A
mA
W
O Q
A U
E
K
LL
M DD
NN T
T
123
G B
J
F P
C
DIM MILLIMETERS
A 10.30 MAX
B 15.30 MAX
C 2.70Ź0.30 S D 0.85 MAX
E Φ3.20Ź0.20
F 3.00Ź0.30
G 12.30 MAX
T
RH
0.75 MAX
J 13.60Ź0.50
K 3.90 MAX
L 1.20
VM N
1.30 2.54
O 4.50Ź0.20
P 6.80
Q 2.60Ź0.20
HR S
10Ɓ 25Ş
T 5Ş
U 0.5
V 2.60Ź0.15
1. BASE 2. COLLECTOR 3. EMI...
