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TIP117

EPITAXIAL PLANAR PNP TRANSISTOR

Description

SEMICONDUCTOR TECHNICAL DATA TIP117 EPITAXIAL PLANAR PNP TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. FEATURES ᴌHigh DC Current Gain. : hFE=1000(Min.), ᷤVCE=-4V, IC=-1A. ᴌLow Collector-Emitter Saturation Voltage. ᴌComplementary to TIP112. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Volta...

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