SUM110N08-07P

SUM110N08-07P Vishay Siliconix N-Channel 75 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 75 0.007 at VGS = 10 V ID (A) 110d Qg (Typ.) 69 TO-263 FEATURES TrenchFET® Power MOSFETS 100 % Rg and UIS Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Synchronous Rectification D G DS Top View Ordering Information: SUM110N08-07P-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C ID Pulsed Drain Current IDM Avalanche Current IAS Single Avalanche Energya L = 0.1 mH EAS Maximum Power Dissipationa TC = 25 °C TA = 25 °Cc PD Operating Junction and Storage Temperature Range TJ, Tstg G S N-Channel MOSFET Limit 75 ± 20 110d 103 180 50 125 208.3b 3.75 - 55 to 150 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Jun...