BAS21AHT1G

BAS21AHT1G Low Leakage Switching Diode Features NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Symbol Rating Value Unit VR Continuous Reverse Voltage VRRM Repetitive Peak Reverse Voltage IF Peak Forward Current IFM(surge) Peak Forward Surge Current THERMAL CHARACTERISTICS 250 Vdc 250 Vdc 200 mAdc 625 mAdc Symbol Characteristic Max Unit PD Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C 200 mW 1.57 mW/°C RqJA Thermal Resistance, Junction−to−Ambient 635 °C/W TJ, Tstg Junction and Storage Temperature Range −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5...