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MT16VDDT3264A Dataheets PDF



Part Number MT16VDDT3264A
Manufacturers Micron
Logo Micron
Description 256MB DDR SDRAM UNBUFFERED DIMM
Datasheet MT16VDDT3264A DatasheetMT16VDDT3264A Datasheet (PDF)

256MB, 512MB, 1GB, 2GB (x64, DR) 184-PIN DDR SDRAM UDIMM DDR SDRAM UNBUFFERED DIMM MT16VDDT3264A – 256MB MT16VDDT6464A – 512MB MT16VDDT12864A MT16VDDT25664A – – 1GB 2GB (ADVANCE)‡ For the latest data sheet, please refer to the Micron Web site: www.micron.com/products/modules Features • 184-pin, dual in-line memory module (DIMM) • Fast data transfer rates: PC2100 or PC2700 • Utilizes 266 MT/s and 333 MT/s DDR SDRAM components • 256MB (32 Meg x 64), 512MB (64 Meg x 64), 1GB (128 Meg x 6.

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256MB, 512MB, 1GB, 2GB (x64, DR) 184-PIN DDR SDRAM UDIMM DDR SDRAM UNBUFFERED DIMM MT16VDDT3264A – 256MB MT16VDDT6464A – 512MB MT16VDDT12864A MT16VDDT25664A – – 1GB 2GB (ADVANCE)‡ For the latest data sheet, please refer to the Micron Web site: www.micron.com/products/modules Features • 184-pin, dual in-line memory module (DIMM) • Fast data transfer rates: PC2100 or PC2700 • Utilizes 266 MT/s and 333 MT/s DDR SDRAM components • 256MB (32 Meg x 64), 512MB (64 Meg x 64), 1GB (128 Meg x 64), and 2GB (256 Meg x 64) • VDD = VDDQ = +2.5V • VDDSPD = +2.3V to +3.6V • 2.5V I/O (SSTL_2 compatible) • Commands entered on each positive CK edge • DQS edge-aligned with data for READs; center- aligned with data for WRITEs • Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle • Bidirectional data strobe (DQS) transmitted/ received with data—i.e., source-synchronous data capture • Differential clock inputs (CK and CK#.


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