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NSVMMBD352WT1G

Part Number	NSVMMBD352WT1G
Manufacturer	ON Semiconductor
Description	Dual Schottky Barrier Diode
Features	 Very Low Capacitance − Less Than 1.0 pF @ 0 V  Low Forward Voltage − 0.5 V (Typ) @ IF = 10 mA  AEC Qualified and PPA...
Published	May 1, 2017
Datasheet	NSVMMBD352WT1G PDF File

Features

 Very Low Capacitance − Less Than 1.0 pF @ 0 V 
 Low Forward Voltage − 0.5 V (Typ) @ IF = 10 mA 
 AEC Qualified and PPAP Capable 
 NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements

 These Devices...

Similar Datasheet

NSVMMBD352WT1G Dual Schottky Barrier Diode - ON Semiconductor

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