1SS400T1G

High-Speed Switching Diode 1SS400T1G, NSV1SS400T1G Features High−Speed Switching Applications Lead Finish: 100% Matte Sn (Tin) Qualified Maximum Reflow Temperature: 260°C Extremely Small SOD−523 Package NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25°C) Rating Reverse Voltage Forward Current Peak Forward Surge Current THERMAL CHARACTERISTICS Symbol VR IF IFM(surge) Max 100 200 500 Unit V mAdc mAdc Characteristic Total Device Dissipation FR−5 Board (Note 1) @TA = 25°C Derate above 25°C Symbol PD Max Unit 200 mW 1.57 mW/°C Thermal Resistance, Junction-to-Ambient RqJA 635 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to °C +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−4 @ Minimum Pad. ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 80 Vdc) IR − 0.1 mAdc Diode Capacitance (VR = 0 V, f = 1.0 MHz) CD − 3.0 pF Forward Voltage (IF = 100 mAdc) VF − 1.2 Vdc Reverse Recovery Time (IF = IR = 10 mAdc) trr − 4.0 ns 1 CATHODE DATA SHEET www.onsemi.com 2 ANODE 1 SOD−523 CASE 502 PLASTIC MAR...