WNM2046B
Single N-Channel, 20V, 0.71A, Power MOSFET
VDS (V) 20
Typical Rds(on) (Ω) 0.220@ VGS=4.5V 0.260@ VGS=2.5V 0....
WNM2046B
Single N-Channel, 20V, 0.71A, Power MOSFET
VDS (V) 20
Typical Rds(on) (Ω) 0.220@ VGS=4.5V 0.260@ VGS=2.5V 0.315@ VGS=1.8V
WNM2046B
Http://www.sh-willsemi.com
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Descriptions
DFN1006-3L
The WNM2046B is N-Channel enhancement MOS Field Effect
Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM2046B is Pb-free.
Features
Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package DFN1006-3L
Applications
D
GS
Pin configuration (Top view)
6 = Device Code * = Month (A~Z)
Marking
Small Signal Switching Small Moto Driver
Order information
Device WNM2046B-3/TR
Package DFN1006-3L
Shipping 10K/Reel&Tape
Will Semiconductor Ltd.
1
Aug, 2014- Rev.1.0
Absolute Maximum ratings
Parameter Drain-Source Volta...
