WPM3023

WPM3023 Single P-Channel, -30V, -3.9A, Power MOSFET VDS (V) -30 Typical RDS(on) (mΩ) 37 @ VGS=-10V 50 @ VGS=-4.5V WPM3023 Http://www.sh-willsemi.com Descriptions The WPM3023 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM3023 is Pb-free. Features SOT-23 D 3 12 GS Pin configuration (Top view)  Trench Technology  Supper high density cell design  Excellent ON resistance  Extremely Low Threshold Voltage  Small package SOT-23 Applications  DC/DC converters  Power supply converters circuit  Load/Power Switching for portable device PF = Device Code Y = Year W = Week(A~z) Marking Order information Device WPM3023-3/TR Package SOT-23 Shipping 3000/Tape&Reel Will Semiconductor Ltd. 1 July.2016- Rev.1.0 Absolute Maximum ratings Parameter Drain-Source Vol...