WNMD2176

WNMD2176 Dual N-Channel, 20V, 2.6A, Power MOSFET WNMD2176 www.sh-willsemi.com VDS (V) Typical RDS(on) (mΩ) 20 56@ VGS=4.5V 76@ VGS=2.5V ESD Protected Descriptions The WNMD2176 is N-Channel enhancement MOS Field Effect Transistor.Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.This device is suitable for use in DC-DC conversion,power switch and charging circuit. Standard Product WNMD2176 is Pb-free. Features  Trench Technology  Supper high density cell design  Excellent ON resistance  Extremely Low Threshold Voltage  Small package SOT-23-6L Applications SOT-23-6L D1 S1 D2 6 54 1 23 G1 S2 G2 Pin configuration (Top view) 6 54 2176 NDYW 1 23 2176 ND Y W = Device Code = Special Code = Year =Week(A~z)  Driver for Relay, Solenoid, Motor, LED etc.  Power supply converters circui t  Load/Power Switching for portable device Marking Order information Device Package Shipping WNMD2176-6/TR SOT-23-6L 3000/Tape&Ree...