WNM3018

WNM3018 Small Signal N-Channel, 30V, 0.2A, MOSFET VDS (V) Typical Rds(on) (Ω) 1.2@ VGS=10V 30 1.4@ VGS=4.5V 1.9@ VGS=2.5V ESD Rating: 2000V HBM Descriptions The WNM3018 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in small signal switch. Standard Product WNM3018 is Pb-free and Halogen-free. WNM3018 Http://www.sh-willsemi.com Pin configuration (Top view) Features  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  HBM ESD protection >2 kV  Small package SOT-323 Applications  Driver: Relay, Solenoid, Lamps,Hammers etc.  Power supply converters circuit  Load/Power Switching for potable device 18 = Device Code * = Month (A~Z) Marking Order information Device WMN3018-3/TR Package Shipping SOT-323 3000/Reel&Tape Will Semiconductor Ltd. 1 2015/8/10 – Rev. 1.0 Absolute Maximu...