WNM01N11
Single N-Channel, 110V, 1.8A, Power MOSFET
VDS (V) 110
Typical Rds(on) (Ω) 0.230@ VGS=10V 0.250@ VGS=4.5V
WNM01N11
Http://www.sh-willsemi.com
Descriptions
The WNM01N11 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for u...
