WNM01N10

WNM01N10 Single N-Channel, 100V, 1.7A, Power MOSFET VDS (V) 100 Typical Rds(on) (Ω) 0.235@ VGS=10V 0.255@ VGS=4.5V Descriptions The WNM01N10 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM01N10 is Pb-free and Halogen-free. WNM01N10 Http://www.sh-willsemi.com D S G SOT-23 D 3 12 GS Pin configuration (Top view) Features  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Small package SOT-23 Applications  Driver for Relay, Solenoid, Motor, LED etc.  DC-DC converter circuit  Power Switch  Load Switch  Charging NA = Device Code Y = Year W = Week Marking Order information Device Package WNM01N10-3/TR SOT-23 Shipping 3000/Reel&Tape Will Semiconductor Ltd. 1 2016/01/18 – Rev. 1.2 Absolute Maxim...