WNMD3014

WNMD3014 Dual N-Channel, 30V, 6.8A, Power MOSFET VDS (V) 30 Rds(on) (ȍ) 0.023@ VGS=10V 0.033@ VGS=4.5V WNMD3014 Http//:www.willsemi.com Descriptions The WNMD3014 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD3014 is Pb-free and Halogen-free. Features SOP-8L D1 D1 D2 D2 8 76 5 1 234 S1 G1 S2 G2 z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOP-8L Applications z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch z Charging Pin configuration (Top view) 87 6 WNM3014 YYWW 5 1 2 34 WNM3014 = Device Code YY = Year WW = Week Marking Order information Device Package Shipping WNMD3014-8/TR SOP-8L 2500/Reel&Tape Will ...