WNMD3014
Dual N-Channel, 30V, 6.8A, Power MOSFET
VDS (V) 30
Rds(on) (ȍ) 0.023@ VGS=10V 0.033@ VGS=4.5V
WNMD3014
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WNMD3014
Dual N-Channel, 30V, 6.8A, Power MOSFET
VDS (V) 30
Rds(on) (ȍ) 0.023@ VGS=10V 0.033@ VGS=4.5V
WNMD3014
Http//:www.willsemi.com
Descriptions
The WNMD3014 is N-Channel enhancement MOS Field Effect
Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD3014 is Pb-free and Halogen-free.
Features
SOP-8L
D1 D1 D2 D2 8 76 5
1 234 S1 G1 S2 G2
z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOP-8L
Applications
z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch z Charging
Pin configuration (Top view)
87 6
WNM3014 YYWW
5
1 2 34
WNM3014 = Device Code YY = Year WW = Week
Marking
Order information
Device
Package
Shipping
WNMD3014-8/TR SOP-8L 2500/Reel&Tape
Will ...