WNMD2172
Dual N-Channel, 20V, 7.0A, Power MOSFET
VDS (V)
20
ESD Protected
Descriptions
Rds(on) (Ω) 0.015@ VGS=4.5V 0....
WNMD2172
Dual N-Channel, 20V, 7.0A, Power MOSFET
VDS (V)
20
ESD Protected
Descriptions
Rds(on) (Ω) 0.015@ VGS=4.5V 0.0155@ VGS=4.0V 0.017@ VGS=3.1V 0.018@ VGS=2.5V 0.021@ VGS=1.8V
The WNMD2172 is Dual N-Channel enhancement MOS Field Effect
Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD2172 is Pb-free and Halogen-free.
Features
WNMD2172
Http//:www.sh-willsemi.com
TSSOP-8L
D1/D2 S2 S2 G2 8 76 5
12 34 D1/D2 S1 S1 G1
Pin configuration (Top view) 87 65
Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package TSSOP-8L
Applications
Driver for Relay, Solenoid, Motor, LED etc. DC-DC converter circuit Power Switch Load Switch Charging
WLS I 2 1 72
WDYW
12 3 4
WLSI 2172 WD
= Willsemi = Device Co...
