WNMD2160
Dual N-Channel, 20V, 6.3A, Power MOSFET
VDS (V)
Rds(on) (ȍ)
0.0157@ VGS=4.5V
0.018@ VGS=3.1V 20
0.020@ VGS...
WNMD2160
Dual N-Channel, 20V, 6.3A, Power MOSFET
VDS (V)
Rds(on) (ȍ)
0.0157@ VGS=4.5V
0.018@ VGS=3.1V 20
0.020@ VGS=2.5V
ESD Rating: 2000V HBM
WNMD2160
Http//:www.willsemi.com
Descriptions
The WNMD2160 is N-Channel enhancement MOS Field Effect
Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD2160 is Pb-free.
Features
SOT-23-6L
G1 D1/D2 G2 654
1 23 S1 D1/D2 S2
Pin configuration (Top view)
z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23-6L
Applications
z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch z Charging
6 54
2160 YYWW
1 23
2160 YY WW
= Device Code = Year = Week
Marking
Order information
Device
Package
Shipping
WNMD2160-6/TR SOT-23-6L 3...