WNMD2155
WNMD2155
Dual N-Channel, 20V, 7.9A, Power MOSFET
Http//:www.willsemi.com
VDS (V)
Rds(on) (ȍ)
0.018@ VGS=1...
WNMD2155
WNMD2155
Dual N-Channel, 20V, 7.9A, Power MOSFET
Http//:www.willsemi.com
VDS (V)
Rds(on) (ȍ)
0.018@ VGS=10V
0.020@ VGS=4.5V 20
0.025@ VGS=2.5V
0.031@ VGS=1.8V
Descriptions
The WNMD2155 is N-Channel enhancement MOS Field Effect
Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD2155 is Pb-free.
SOP-8L
D1 D1 D2 8 76
D2 5
Features
z Trench Technology
1 234 S1 G1 S2 G2
Pin configuration (Top view)
8 7 65
z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOP-8L
Applications
z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch z Charging
WNM2155 YYWW
1 2 34
=Logo WNM2155 = Device Code YY = Year WW = Week
Marking
Order information
Device
Package
Shipping
WNMD2155-8/TR S...
