WNMD2154

WNMD2154 Dual N-Channel, 20V, 0.88A, Small Signal MOSFET VDS (V) 20 Rds(on) (ȍ) 0.220@ VGS=4.5V 0.260@ VGS=2.5V 0.320@ VGS=1.8V Descriptions The WNMD2154 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift. Standard Product WNMD2154 is Pb-free. Features z Trench Technology z Supper high density cell design z Excellent ON resistance z Extremely Low Threshold Voltage z Small package SOT-563 WNMD2154 Http//:www.willsemi.com SOT-563 D1 G2 S2 6 54 1 23 S1 G1 D2 Pin configuration (Top view) 6 54 54* 1 23 54 = Device Code * = Month (A~Z) Marking Applications z DC-DC converter circuit z Load Switch z Level Shift Order information Device Package Shipping WNMD2154-6/TR SOT-563 3000/Reel&Tape Will Semiconductor Ltd. 1 Dec,2011 - Rev.1.4 Absolute Maximum ratings Parameter Drain-Source Voltage Gate-Source Vo...