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WNM4006

Will Semiconductor

N-Channel MOSFET


Description
WNM4006 Single N-Channel, 45V, 1.7A, Power MOSFET VDS (V) 45 Rds(on) (ȍ) 0.126@ VGS=10V 0.142@ VGS=4.5V 0.147@ VGS=4.0V 0.208@ VGS=2.5V Descriptions The WNM4006 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conv...



Will Semiconductor

WNM4006

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